MJ11013

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary

MJ11013

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C

MJ11013

BipolarPNPDeviceinaHermeticallysealedTO3

MJ11013

PowerTransistors

PowerTransistors TO-3Case(Continued)

MJ11013

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

PS11013

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

PS11013

FLAT-BASETYPEINSULATEDTYPE

INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON

PS11013

ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE

INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON