25-29 GHz GaAs MMIC Driver Amplifier

Description Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the hig

文件：98.85 Kbytes 页数：2 Pages

ALPHA

23.5-26.5 GHz GaAs MMIC Power Amplifier

Description Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repea

文件：170.72 Kbytes 页数：2 Pages

ALPHA

23.5-26.5 GHz Surface Mount Medium Power Amplifier

Description The AA026P2-A4 is a broadband millimeterwave medium power amplifier in a rugged surface mount package that is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as an output stage or driver in the trans

文件：646.07 Kbytes 页数：4 Pages

ALPHA

24-30 GHz GaAs MMIC Low Noise Amplifier

Description Alpha’s three-stage reactively-matched 24–30 GHz MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography

文件：96.18 Kbytes 页数：2 Pages

ALPHA

23-30 GHz Low Noise Amplifier

Description The AA028N1-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end or transmitter gain stage when high gain, wide dynamic range, and low noise figure are required.The

文件：317.82 Kbytes 页数：4 Pages

ALPHA

24-30 GHz Surface Mount Low Noise Amplifier

Description The AA028N1-A2 is a broadband millimeterwave low noise amplifier in a rugged surface mount package which is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver frontend or as a gain stage

文件：532.37 Kbytes 页数：4 Pages

ALPHA

27-29 GHz GaAs MMIC Power Amplifier

Description Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10 power added efficiency at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the h

文件：139.01 Kbytes 页数：2 Pages

ALPHA

27-31 GHz GaAs MMIC Driver Amplifier

Description Alpha’s two-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 14 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest

文件：80.79 Kbytes 页数：2 Pages

ALPHA

25-31 GHz Amplifier

Description The AA028P2-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter, or local oscillator chain. The robust ceramic and metal package provides excell

文件：490.92 Kbytes 页数：4 Pages

ALPHA

25-31 GHz Surface Mount Amplifier

Description The AA028P2-A2 is a broadband millimeterwave driver amplifier in a rugged surface mount package which is compatible with high volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter,

文件：546.58 Kbytes 页数：4 Pages

ALPHA