AA0200-100-9X

Aluminum Nitride 2 dB FLANGED ATTENUATOR

Features: ♦AluminumNitrideMaterial ♦DC-2GHzPerformance ♦100WattInputPower ♦FlangeMount

AA0200-10-3X

Aluminum Nitride

Features: ♦AluminumNitrideMaterial ♦DC-4GHzPerformance ♦10WattInputPower ♦FlangeMount GeneralDescription: TheAA0200-10-3Xisa2dB,Aluminum Nitrideflangedattenuator.Ithasaninputpowerrating of10watts,whilemaintainingaconstantflange temperatureof100°C.I

AA0200-40-3X

Aluminum Nitride 2 dB FLANGED ATTENUATOR

Features: ♦AluminumNitrideMaterial ♦DC-4GHzPerformance ♦40WattInputPower ♦FlangeMount

AA0200-50-1X

Aluminum Nitride FLANGED ATTENUATOR

Features: ♦AlNMaterial ♦DC-4GHzPerformance ♦50WattInputPower ♦FlangeMount

AA022N1-00

21-24 GHz GaAs MMIC Low Noise Amplifier

Description Alpha’sthree-stagereactively-matched21–24GHzMMIClownoiseamplifierhastypicalsmallsignalgainof19dBwithatypicalnoisefigureof2.6dBat23GHz.ThechipusesAlpha’sproven0.25µmlownoisePHEMTtechnology,andisbaseduponMBElayersandelectronbeamlithography

AA022N1-65

20-24 GHz Low Noise Amplifier

Description TheAA022N1-65isabroadbandmillimeterwaveamplifierinahermeticpackage.Theamplifierisdesignedforuseinmillimeterwavecommunicationandsensorsystemsasthereceiverfront-end,transmittergainstage,orlocaloscillatorgainstagewhenhighgain,widedynamicrange,and

AA022N1-A2

20-24 GHz Surface Mount Low Noise Amplifier

Description TheAA022N1-A2isabroadbandmillimeterwavelownoiseamplifierinaruggedsurfacemountpackagewhichiscompatiblewithhigh-volumesolderinstallation.Theamplifierisdesignedforuseinmillimeterwavecommunicationandsensorsystemsasthereceiverfrontendorasagainstage

AA022P1-00

18-23 GHz GaAs MMIC Power Amplifier

Description Alpha’stwo-stagebalancedKbandGaAsMMICpoweramplifierhasatypicalP1dBof24.5dBmwith13dBassociatedgainand11poweraddedefficiencyat23GHz.ThechipusesAlpha’sproven0.25µmMESFETtechnology,andisbaseduponMBElayersandelectronbeamlithographyforthehig

AA026P1-00

25-29 GHz GaAs MMIC Driver Amplifier

Description Alpha’sthree-stagereactively-matched25–29GHzGaAsMMICdriveramplifierhastypicalsmallsignalgainof17dBwithatypicalP1dBof16dBmat26.5GHz.ThechipusesAlpha’sproven0.25µmMESFETtechnology,andisbaseduponMBElayersandelectronbeamlithographyforthehig

AA026P2-00

23.5-26.5 GHz GaAs MMIC Power Amplifier

Description Alpha’sthree-stagebalancedKbandGaAsMMICpoweramplifierhasatypicalP1dBof24dBmandatypicalPSATof26dBmat26.5GHz.ThechipusesAlpha’sproven0.25µmMESFETtechnology,andisbaseduponMBElayersandelectronbeamlithographyforthehighestuniformityandrepea