丝印：AA02；Package：DFN-12L；ECPower™ 23 V 18 mΩ Bidirectional Load Switch with Over-Voltage and Over-Current Protection

General Description The AOZ1375DI is a bidirectional current-limited load switch intended for applications that require circuit protections. The device operates from voltages between 3.4 V and 23 V and features two power terminals, VINT and VBUS, which are rated at 28 V Absolute Maximum. When

文件：5.68827 Mbytes 页数：17 Pages

AOSMD

万国半导体

丝印：AA02；Package：DFN3x5.2-20L；USB Type-C PD 20mΩ Sink and 39mΩ Source Combo 2-in-1 Protection Switches

General Description AOZ1380DI integrates two back-to-back power switches and control circuitry into one single package to provide all the functionality and protection needed for sourcing and sinking current through a USB Type-C port with PD capability. The device can sink current from the Typ

文件：2.49604 Mbytes 页数：24 Pages

AOSMD

万国半导体

Aluminum Nitride 2 dB FLANGED ATTENUATOR

Features: ♦ Aluminum Nitride Material ♦ DC - 2 GHz Performance ♦ 100 Watt Input Power ♦ Flange Mount

文件：134.62 Kbytes 页数：1 Pages

BARRY

Vishay Barry

Aluminum Nitride

Features: ♦ Aluminum Nitride Material ♦ DC - 4 GHz Performance ♦ 10 Watt Input Power ♦ Flange Mount General Description: The AA0200-10-3X is a 2 dB, Aluminum Nitride flanged attenuator. It has an input power rating of 10 watts, while maintaining a constant flange temperature of 100°C. I

文件：139.17 Kbytes 页数：1 Pages

BARRY

Vishay Barry

Aluminum Nitride 2 dB FLANGED ATTENUATOR

Features: ♦ Aluminum Nitride Material ♦ DC - 4 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount

文件：140.99 Kbytes 页数：1 Pages

BARRY

Vishay Barry

Aluminum Nitride FLANGED ATTENUATOR

Features: ♦ AlN Material ♦ DC - 4 GHz Performance ♦ 50 Watt Input Power ♦ Flange Mount

文件：187.4 Kbytes 页数：1 Pages

BARRY

Vishay Barry

21-24 GHz GaAs MMIC Low Noise Amplifier

Description Alpha’s three-stage reactively-matched 21–24 GHz MMIC low noise amplifier has typical small signal gain of 19 dB with a typical noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography

文件：118.64 Kbytes 页数：2 Pages

ALPHA

20-24 GHz Low Noise Amplifier

Description The AA022N1-65 is a broadband millimeterwave amplifier in a hermetic package. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end, transmitter gain stage, or local oscillator gain stage when high gain, wide dynamic range, and

文件：662.34 Kbytes 页数：4 Pages

ALPHA

20-24 GHz Surface Mount Low Noise Amplifier

Description The AA022N1-A2 is a broadband millimeterwave low noise amplifier in a rugged surface mount package which is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver frontend or as a gain stage

文件：548.98 Kbytes 页数：4 Pages

ALPHA

18-23 GHz GaAs MMIC Power Amplifier

Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11 power added efficiency at 23 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the hig

文件：139.49 Kbytes 页数：2 Pages

ALPHA