NC7S04L6X-L22175

Marking：AA；Package：SIP6；TinyLogic HS Inverter

Description TheNC7S04isasinglehighperformanceCMOSInverter. AdvancedSiliconGateCMOSfabricationassureshighspeedandlow powercircuitoperationoverabroadVCCrange.ESDprotection diodesinherentlyguardbothinputandoutputwithrespecttotheVCC andGNDrails.Threestages

NCP189CMTW120TAG

Marking：AA；Package：WDFNW6；LDO Regulator, 0.5 A, High Accuracy (0.7), Adjustable, Low Noise, High PSRR with Power Good

TheNCP189isa0.5ALDO,nextgenerationofhighPSRR,low noiseandlowdropoutregulatorswithPowerGoodopencollector output.DesignedtomeettherequirementsofRFandsensitiveanalog circuits,theNCP189deviceprovideslownoise,highPSRRandlow quiescentcurrentwhileofferingt

NL17SZ00DBVT1G

Marking：AA；Package：SC-74A；Single 2-Input NAND Gate

TheNL17SZ00isasingle2−inputNANDGateintinyfootprint packages. Features •Designedfor1.65Vto5.5VVCCOperation •2.4nstPDatVCC=5V(typ) •Inputs/OutputsOvervoltageTolerantupto5.5V •IOFFSupportsPartialPowerDownProtection •Source/Sink24mAat3.0V •Avai

NVLJS053N12MCLTAG

Marking：AA；Package：UDFN6；MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 53 m, 4.8 A

Features •ShieldedGateMOSFETTechnology •50LowerQrrthanOtherMOSFETSuppliers •LowersSwitchingNoise/EMI •LowProfile−0.5mmMaximuminMicroFET2x2mm •100UILTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplicati

NX3008NBKT

Marking：AA；Package：SOT416；30 V, 350 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching Lowthresholdvoltage TrenchMOSFETtechnology ESDpr

NX3008NBKV

Marking：AA；Package：SOT666；30 V, 400 mA dual N-channel Trench MOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallandflatlead SOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETtech

PBSS5620PA

Marking：AA；Package：HUSON3；20 V, 6 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS4620PA. Featuresandbenefits ■Lowcollector-emittersaturatio

PDTC144VT

Marking：AA；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PESD5V0U1BA

Marking：AA；Package：SOD323；Low capacitance bidirectional ESD protection diode

1.Generaldescription LowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits •Bi

PESD5V0U1BA

Marking：AA；Package：SOD-323；Ultra low capacitance bidirectional ElectroStatic

Description UltralowcapacitancebidirectionalElectroStatic Discharge(ESD)protectiondiodesinsmallSurface- MountedDevice(SMD)plasticpackagesdesigned toprotectonedatalinefromthedamagecausedby ESD. Features BidirectionalESDprotectionofoneline Ultralowleakagecurre