APM2317AC-TR

P-ChannelEnhancementModeMOSFET

Features ●-20V/-4.5A, RDS(ON)=28mW(typ.)@VGS=-4.5V RDS(ON)=38mW(typ.)@VGS=-2.5V RDS(ON)=55mW(typ.)@VGS=-1.8V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) Applications ●PowerManagementinNotebookComputer,PortableEquip

APM2317AC-TRG

P-Channel20-V(D-S)MOSFET

APM2317AC-TRL

P-ChannelEnhancementModeMOSFET

Features ●-20V/-4.5A, RDS(ON)=28mW(typ.)@VGS=-4.5V RDS(ON)=38mW(typ.)@VGS=-2.5V RDS(ON)=55mW(typ.)@VGS=-1.8V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) Applications ●PowerManagementinNotebookComputer,PortableEquip

APM2317AC-TRL

P-Channel20-V(D-S)MOSFET

CES2317

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CES2317

P-ChannelEnhancementModeFieldEffectTransistor

30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant. RDS(ON)=120mW@VGS=-2.5V.

CPC2317N

DualSingle-Pole8-PinSOICOptoMOS짰Relay

CPC2317NTR

DualSingle-Pole8-PinSOICOptoMOS짰Relay

DA2317-AL

SMTGateDriveTransformers

DA2317-AL_

SMTGateDriveTransformers