10BJ60A

Marking：A60；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ60A

Marking：A60；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

PJA3460-AU_R1_000A1

Marking：A60；Package：SOT-23；60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@2A

1.0SMBJ60A

Marking：A60；1000 WATT TVS COMPONENT

MMFA60R175S6ZTH

Marking：A60R175S6Z；Package：TO-220FA；600V 0.175Ω N-channel MOSFET

Description Superior6thgenerationSJMOSFETs(S6-series)arecutting-edgehighvoltagepowerMOSFETs, basedonMagnachip’sextensivedesignexpertiseandyearsofexperience.ThemainstrengthsofS6- seriesarelowon-resistance,lowgatechargeandreducedtendencyforringing.Asaresul

MMFA60R1K0RFZTH

Marking：A60R1K0RFZ；Package：TO-220FA；600V 1.0Ω N-channel MOSFET

Description MMF60R1K0RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt

MMFA60R400RFZTH

Marking：A60R400RFZ；Package：TO-220FA；600V 0.40Ω N-channel MOSFET

Description MMFA60R400RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMI

MMFA60R650RFZTH

Marking：A60R650RFZ；Package：TO-220FA；600V 0.65Ω N-channel MOSFET

Description MMFA60R650RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMI

NCEA6042AG

Marking：A6042AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description TheNCEA6042AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Automotiveapplication ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●

NCEA6050KA

Marking：A6050KA；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description TheNCEA6050KAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=50A RDS(ON)