丝印：A60；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：A60；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：SOT-23；60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@2A

文件：717.47 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A60；1000 WATT TVS COMPONENT

文件：454.73 Kbytes 页数：7 Pages

PROTEC

丝印：A6042AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Automotive application ● Power switching application ● Hard switched and high frequency circuits ●

文件：628.61 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：A6050KA；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

文件：1.05066 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：A6058K；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6058K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =64A RDS(ON)

文件：905.23 Kbytes 页数：6 Pages

NCEPOWER

新洁能