型号：10BJ60A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

型号：10SMBJ60A；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

型号：PJA3460-AU_R1_000A1；Package：SOT-23；60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@2A

文件：717.47 Kbytes 页数：6 Pages

PANJIT

強茂

型号：1.0SMBJ60A；1000 WATT TVS COMPONENT

文件：454.73 Kbytes 页数：7 Pages

PROTEC

型号：MMFA60R175S6ZTH；Package：TO-220FA；600V 0.175Ω N-channel MOSFET

 Description Superior 6th generation SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs, based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6- series are low on-resistance, low gate charge and reduced tendency for ringing. As a resul

文件：829.95 Kbytes 页数：10 Pages

MGCHIP

型号：MMFA60R1K0RFZTH；Package：TO-220FA；600V 1.0Ω N-channel MOSFET

 Description MMF60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：740 Kbytes 页数：10 Pages

MGCHIP

型号：MMFA60R400RFZTH；Package：TO-220FA；600V 0.40Ω N-channel MOSFET

 Description MMFA60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI

文件：740.33 Kbytes 页数：10 Pages

MGCHIP

型号：MMFA60R650RFZTH；Package：TO-220FA；600V 0.65Ω N-channel MOSFET

 Description MMFA60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI

文件：741.9 Kbytes 页数：10 Pages

MGCHIP

型号：NCEA6042AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Automotive application ● Power switching application ● Hard switched and high frequency circuits ●

文件：628.61 Kbytes 页数：6 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：NCEA6050KA；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

文件：1.05066 Mbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司