丝印：A60；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：A60；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：VSSOP；LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature Package

1 Features 1(VS = 12V, TA = 25°C, Typical values unless specified). • GBWP 15MHz • Wide supply voltage range 2.5 V to 24 V • Slew rate 15 V/μs • Supply current/channel 0.95 mA • Cap load tolerance Unlimited • Output short circuit current ±13 0mA • Output current (1 V from rails) ±65 mA •

文件：938.49 Kbytes 页数：26 Pages

TI

德州仪器

丝印：A60；Package：SOT-23；60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@2A

文件：717.47 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A60；1000 WATT TVS COMPONENT

文件：454.73 Kbytes 页数：7 Pages

PROTEC

丝印：A60R175S6Z；Package：TO-220FA；600V 0.175Ω N-channel MOSFET

 Description Superior 6th generation SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs, based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6- series are low on-resistance, low gate charge and reduced tendency for ringing. As a resul

文件：829.95 Kbytes 页数：10 Pages

MGCHIP

丝印：A60R1K0RFZ；Package：TO-220FA；600V 1.0Ω N-channel MOSFET

 Description MMF60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：740 Kbytes 页数：10 Pages

MGCHIP

丝印：A60R400RFZ；Package：TO-220FA；600V 0.40Ω N-channel MOSFET

 Description MMFA60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI

文件：740.33 Kbytes 页数：10 Pages

MGCHIP