PBSS4620PA

Marking：A6；Package：HUSON3；20 V, 6 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. PNPcomplement:PBSS5620PA. Featuresandbenefits ■Lowcollector-emittersaturatio

PBSS4620PA-Q

Marking：A6；Package：DFN2020-3；20 V, 6 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-Mounted Device(SMD)plasticpackagewithmediumpowercapability. PNPcomplement:PBSS5620PA 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcol

PESD3V3L4UG

Marking：A6；Package：SOT353；Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. Table1.Productoverv

PESD5V0L4UF

Marking：A6；Package：SOT886；Low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto foursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applic

PESD5V0U4BW

Marking：A6；Package：SOT665；Ultra low capacitance bidirectional quadruple ESD protection array

1.Generaldescription UltralowcapacitancebidirectionalquadrupleElectroStaticDischarge(ESD)protectionarrayin anultrasmallandflatleadSOT666Surface-MountedDevice(SMD)plasticpackage,designedto protectuptofoursignallinesfromthedamagecausedbyESDandothertransients

PMEG2020EH

Marking：A6；Package：SOD123F；20 V, 2 A very low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin asmallandflatleadSOD123FSurfaceMountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:2A •Reversevoltage:20V •Verylowforwa

PMEG3030BEP

Marking：A6；Package：CFP5；30 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤3A •Reversevoltage:VR≤3

PMEG3030BEP-Q

Marking：A6；Package：CFP5；30 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤3A •Reversevoltage:VR≤3

PTVS7V5S1UR

Marking：A6；Package：SOD123W；400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto

PTVS7V5S1UR-Q

Marking：A6；Package：SOD123W；400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=400W(350Wfor3V3) •Reve