AO3406

Marking：A6*；Package：SOT-23-3；N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=3.6A(VGS=10V) ●RDS(ON)

BAS16H

Marking：A6FYW；Package：SOT-23；215mA, 100V High Speed Switching Diode

FEATURES AEC-Q101qualified Fastswitchingspeed Idealforautomatedplacement Moisturesensitivitylevel:level1,perJ-STD-020 RoHSCompliant Halogen-free APPLICATIONS High-speedswitching General-purposeswitching

BGA2012

Marking：A6-；Package：SOT-363；1900 MHz high linear low noise amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)amplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsina6-pinSOT363plasticSMDpackage. FEATURES •Lowcurrent,lowvoltage •Highlinearity •Highpowergain •

KSA643

Marking：A643；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURE Collectordissipation ComplementtoKSD261

KSA643-TA

Marking：A643；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURE Collectordissipation ComplementtoKSD261

MC2838

Marking：A61；Package：SOT-23；SWITCHING DIODES

SWITCHINGDIODES FEATURES ●Highspeedswitching:trr=3.0ns(max) ●Lowcapacitance:CT=1.1pF(typ.)

MMBD2838

Marking：A61；Package：SOT-23；Power dissipation

FEATURES Powerdissipation PD:150mW(Tamb=25°C) ForwardCurrent IF:300mA ReverseVoltage VR:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

MMBD2838

Marking：A61；Package：SOT-23；Surface mount switching diode

FEATURES ●Highspeedswitching:trr=3.0ns(max) ●Lowcapacitance:CT=1.1pF(typ.) APPLICATIONS ●Smallsignalswitching

MMFA60R175S6ZTH

Marking：A60R175S6Z；Package：TO-220FA；600V 0.175Ω N-channel MOSFET

Description Superior6thgenerationSJMOSFETs(S6-series)arecutting-edgehighvoltagepowerMOSFETs, basedonMagnachip’sextensivedesignexpertiseandyearsofexperience.ThemainstrengthsofS6- seriesarelowon-resistance,lowgatechargeandreducedtendencyforringing.Asaresul

MMFA60R1K0RFZTH

Marking：A60R1K0RFZ；Package：TO-220FA；600V 1.0Ω N-channel MOSFET

Description MMF60R1K0RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt