Airfast RF Power GaN Transistor

This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operati

文件：193.07 Kbytes 页数：11 Pages

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Airfast RF Power GaN Transistor

文件：208.25 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operati

文件：193.07 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operati

文件：193.07 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

文件：208.25 Kbytes 页数：11 Pages

恩XP

3300-3700 MHz，15.1 W平均值，48 V Airfast®射频功率GaN晶体管

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