AO4447

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4447usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.Thisdeviceissuitableforuseasaloadswitch.ThedeviceisESDprotected.StandardProductAO4447isPb-free(meetsROHS&Sony259specifications).AO4447LisaGr

AO4447

30VP-ChannelMOSFET

AO4447

30VP-ChannelMOSFET

GeneralDescription TheAO4447usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.Thisdeviceissuitableforuseasaloadswitch.ThedeviceisESDprotected. ProductSummary VDS(V)=-30V ID=-15A(VGS=-10V) MaxRDS(ON)

AO4447

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-15A(VGS=-10V) ●RDS(ON)

AO4447A

-30VP-ChannelMOSFET

Features VDS(V)=-30V ID=-18.5A(VGS=-10V) RDS(ON)

AO4447A

30VP-ChannelMOSFET

GeneralDescription •TrenchPowerMOSFETtechnology •LowRDS(ON) •ESDProtected •RoHSandHalogen-FreeCompliant Applications •System/LoadSwitch •BatterySwitch •USB-PDLoadSwitch

AO4447A

30VP-ChannelMOSFET

GeneralDescription •TheAO4447AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceisidealforloadswitchandbatteryprotectionapplications. •RoHSandHalogen-FreeCompliant ProductSummary VDS-3

AO4447A

30VP-ChannelMOSFET

GeneralDescription TheAO4447AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceisidealforloadswitchandbatteryprotectionapplications. ProductSummary VDS(V)=-30V ID=-17A(VGS=-10V) RDS(ON)

AO4447A

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-17A(VGS=-10V) ●RDS(ON)

AO4447A

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •LoadSwitch •NotebookAdaptorSwitch