N-Channel Enhancement-Mode Lateral MOSFET

Features • Advanced high performance in--package Doherty • Greater negative gate--source voltage range for improved Class C operation • Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features • Advanced high performance in--package Doherty • Greater negative gate--source voltage range for improved Class C operation • Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

RF Power LDMOS Transistor

文件：364.8 Kbytes 页数：9 Pages

恩XP

RF Power LDMOS Transistor

文件：255.19 Kbytes 页数：8 Pages

恩XP

Airfast RF Power LDMOS Transistor

文件：313.74 Kbytes 页数：13 Pages

恩XP

Airfast RF Power LDMOS Transistor

文件：313.74 Kbytes 页数：13 Pages

恩XP

Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V

The A3V09H521-24S 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. \n• Advanced high performance in-package Doherty\n• Greater negative gate-source voltage range for improved Class C operation\n• Designed for digital predistortion error correction systems\n• RoHS compliant;

恩XP

2496-2690 MHz, 26 dBm Avg., 48 V Airfast® RF Power LDMOS Transistor

恩XP

Automotive

ZENTEL

力积存储