RF LDMOS Wideband Integrated Power Amplifiers

文件：700.79 Kbytes 页数：18 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：700.79 Kbytes 页数：18 Pages

恩XP

3200-4000 MHz, 3.4 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and co • Designed for wide instantaneous bandwidth applications\n• On-chip matching (50 ohm input, DC blocked)\n• Integrated quiescent current temperature compensation with enable/disable function\n• Designed for digital predistortion error correction systems\n• Optimized for Doherty applications\n• RoHS c;

恩XP

TQFP100

MICROCHIP/微芯

上传：深圳市拓亿芯电子有限公司

QFP100

ACTEL

Actel Corporation

上传：深圳硅原半导体有限公司