RF Power GaN Transistor

文件：185.05 Kbytes 页数：8 Pages

恩XP

RF Power GaN Transistor

文件：185.05 Kbytes 页数：8 Pages

恩XP

1800-2200 MHz, 45 W Avg., 48 V Airfast® RF Power GaN Transistor

The A3G20S250-01S 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.\nThis part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance • High terminal impedances for optimal broadband performance\n• Designed for digital predistortion error correction systems\n• Optimized for Doherty applications\n• RoHS compliant;

恩XP

TQFP100

MICROCHIP/微芯

上传：深圳市拓亿芯电子有限公司

QFP100

ACTEL

Actel Corporation

上传：深圳硅原半导体有限公司