A3G20S250-01S中文资料1800-2200 MHz, 45 W Avg., 48 V Airfast® RF Power GaN Transistor数据手册恩XP规格书

描述 Description

The A3G20S250-01S 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

特性 Features

• High terminal impedances for optimal broadband performance
• Designed for digital predistortion error correction systems
• Optimized for Doherty applications
• RoHS compliant