N--Channel Enhancement--Mode Lateral MOSFET

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N--Channel Enhancement--Mode Lateral MOSFET

文件：461.87 Kbytes 页数：11 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：394.88 Kbytes 页数：17 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：221.53 Kbytes 页数：10 Pages

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：221.53 Kbytes 页数：10 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

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N-Channel Enhancement-Mode Lateral MOSFET

文件：697.73 Kbytes 页数：25 Pages

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595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

The A2V07H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz. • Advanced high performance in-package Doherty\n• Greater negative gate-source voltage range for improved Class C operation\n• Designed for digital predistortion error correction systems\n• RoHS compliant;

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720-960 MHz，79 W平均值，48 V Airfast® LDMOS射频功率晶体管

The A2V09H300-04NR3 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Advanced High Performance In-Package Doherty\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction System\n• RoHS Compliant;

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