1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

RF Power GaN Transistor

文件：815.01 Kbytes 页数：18 Pages

恩XP

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

RF Power GaN Transistor

文件：815.01 Kbytes 页数：18 Pages

恩XP

1800-2200 MHz，32 W平均值，48 V Airfast®射频功率GaN晶体管

The A2G22S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.\nThis part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performanc • High Terminal Impedances for Optimal Broadband Performance\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant;

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