A2G22S160-01S

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications

A2G22S160-01S

RF Power GaN Transistor

A2G22S160-01SR3

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications

A2G22S160-01SR3

RF Power GaN Transistor

A2G22S160-01SR3

Package：NI-400S-2S；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC TRANS RF LDMOS

NXP USA Inc.