零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HEXFETPOWERMOSFET DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
22A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelMOSFET | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | ||
N-ChannelMOSFET600V,22A,0.165W | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TO-220F |
165 |
进口原装-真实库存-价实 |
询价 | ||||
IR |
22+ |
TO-220F |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-220F |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-220F |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
VB |
2019 |
TO-247AC |
55000 |
绝对原装正品假一罚十! |
询价 | ||
Doingter |
2020+ |
TO-3P |
53820 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
A |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
询价 | ||
- |
2021+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
A |
23+ |
TO-3P |
6000 |
原装正品,支持实单 |
询价 | ||
VBSEMI |
19+ |
TO-247AC |
29600 |
绝对原装现货,价格优势! |
询价 |
相关规格书
更多- A2531
- A2631
- A290011TL-70
- A2917SEB
- A2919SLB
- A2C20219
- A3120
- A314J
- A316J
- A3545
- A3548
- A3568C
- A3933SEQ
- A3952SB
- A3952SW
- A3953SLB
- A3955SLB
- A3956SLB-24
- A3957SLB-A
- A3958SLB
- A3962SLB
- A3964SLB
- A3966SLBTR
- A3972SB
- A3977SED
- A40MX04-F
- A416316S-40
- A4504
- A5347CA
- A5366CA
- A5817SEP
- A6275ELW
- A6613SED-01B
- A6614SED-03B
- A6618SED
- A6628SEDT
- A6817SEP
- A733
- A80186
- A80387DX-20
- A82385-25
- A82389-10
- A8283SLB
- A82C251
- A8797BH
相关库存
更多- A2630
- A276308AL-70
- A290021TL-70
- A2918SW
- A2982SLW
- A2C22207
- A3144EU
- A3150
- A3402SJ
- A3546
- A3558
- A358F
- A3948SLB
- A3952SLB
- A3953SB
- A3955SB
- A3956SLB
- A3957SLB
- A3958SB
- A3958SLBTR
- A3964SB
- A3966SLB
- A3967SLB
- A3974SED
- A3977SLP
- A40MX04-PL84
- A43L0616AV-7
- A452B
- A5348CA
- A5368CA
- A625308M-70S
- A6276ELW
- A6614SED-02A
- A6615SED
- A6627SJPT
- A6812ELW
- A6919SLB
- A75240
- A80286-8
- A8097BH
- A82385-33
- A8282SLB
- A82C250
- A8581CT
- A8901CLB