FMA2A

Marking：A2；Package：SOT-753；Emitter common (dual digital transistors)

Features 1)TwoDTA144EtransistorsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf.

FMMD2836

Marking：A2；Package：SOT-23；SWITCHING COMMON ANODE DIODE PAIR

SOT23SILICONPLANARHIGHSPEED SWITCHINGCOMMONANODEDIODEPAIR PARTMARKINGDETAIL-A2

GS1001FL

Marking：A2；Package：SOD-123FL；PLASTIC SILICON RECTIFIER

FEATURES ▪Forsurfacemountedapplications ▪Lowprofilepackage ▪GlassPassivatedChipJuntion ▪Idealforautomatedplacement ▪LeadfreeincomplywithEURoHS2011/65/EUdirectives

MIC803-40D2VC3

Marking：A2；Package：SOT-323；3-Pin Microprocessor Supervisor Circuit with Open-Drain Reset Output

GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset

MIC803-40D2VM3

Marking：A2；Package：SOT-23；3-Pin Microprocessor Supervisor Circuit with Open-Drain Reset Output

GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset

MMBD4148W

Marking：A2；Package：SOT-323；Plastic-Encapsulate Diode

FEATURES FastSwitchingSpeed ForGeneralPurposeSwitchingApplications HighConductance

MMBD4148W

Marking：A2；Package：SOT-323；Surface Mount Switching Diode

FEATURES ●Fastswitchingspeed. ●Highconductance. ●Forgeneralpurposeswitchingapplications. ●Surfacemountpackageideallysuited forautomaticinsertion. APPLICATIONS ●Forgeneralpurposeswitchingapplications.

NE5520279A-T1

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

NE5520279A-T1A

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

NSPU5221

Marking：A2；Package：UDFN6；ESD and Surge Protection Diode Low Clamping Voltage

Features •UnidirectionalHighVoltageESDandSurgeProtection •ProvidesESDProtectiontoIEC61000−4−2Level4: ±30kVContactDischarge •SmallPackage:1.8mmx2.0mm •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant