BAS16W

Marking：A2；Package：SOT-323；Surface Mount Switching Diode

FEATURES ●Fastswitchingspeed. ●Highconductance. ●Forgeneralpurposeswitchingapplications. ●Surfacemountpackageideallysuited forautomaticinsertion. APPLICATIONS ●Forgeneralpurposeswitchingapplications.

BAS16WT

Marking：A2；Package：SOT-323；Switching Diodes

EpoxymeetsUL-94V-0flammabilityrating MoistureSensitivityLevel1 Fastswitchingspeed HighConductance SurfacemountpackageideallySuitedforAutomaticInsertion

BAW56SRA-Q

Marking：A2；Package：DFN1412-6；Quad high-speed switching diodes

1.Generaldescription Quadhigh-speedswitchingdiodeswithcommonanodeconfigurationsencapsulatedinaleadless ultrasmallDFN1412-6(SOT1268)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowleakagecurrent •Reversevolt

BC847AQB

Marking：A2；Package：DFN1110D-3；45 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC847AQB-Q

Marking：A2；Package：DFN1110D-3；45 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

BCX53-10T

Marking：A2；Package：SOT89；80 V, 1 A PNP power bipolar transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BGSA200ML9

Marking：A2；Package：TSLP-9-8；Two throws low resistance antenna tuning switch

Features •LowRONresistanceof1.4ΩateachportinONstate •LowCOFFcapacitanceof157fFateachportinOFFstate •HighRFoperatingpeakvoltagehandlingof50VinOFFstate •Lowharmonicgeneration •MIPIRFFE2.1controlinterface •SupportofMIPIandGPIOcontrolmodes •1.

BZX884-B2V7

Marking：A2；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance

CFY30

Marking：A2；Package：SOT-143；GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAsFET *Lownoise(Fmin=1.4dB@4GHz) *Highgain(11.5dBtyp.@4GHz) *Foroscillatorsupto12GHz *Foramplifiersupto6GHz *Ionimplantedplanarstructure *Chipallgoldmetallization *Chipnitridepassivation

EDZ5.1B

Marking：A2；Package：EMD2；Zener diode

Features 1)2-pinultramini-moldtypeforhigh-densitymounting(EMD2). 2)Highreliability. 3)Canbemountedautomatically,usingchipmounter. Applications Constantvoltagecontrol