2SA1241

Marking：A1241；Package：SC-64；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1244

Marking：A1244；Package：SC-65；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1296

Marking：A1296；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features LowSaturationVoltage:VCE(sat) HighDCCurrentGain

2SA1296-TA

Marking：A1296；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features LowSaturationVoltage:VCE(sat) HighDCCurrentGain

ADS127L11IPWR

Marking：A127L11；Package：TSSOP；ADS127L11 400-kSPS, Wide-Bandwidth, 24-Bit, Delta-Sigma ADC

1Features •Programmabledatarate: –Upto400kSPS(widebandfilter) –Upto1.067MSPS(low-latencyfilter) •Selectabledigitalfilter: –Widebandorlow-latency •ACaccuracywithdcprecision: –Dynamicrange:111.5dB(200kSPS) –THD:–120dB –INL:0.9ppmofFS –Offsetdrift:

ADS127L11IPWT

Marking：A127L11；Package：TSSOP；ADS127L11 400-kSPS, Wide-Bandwidth, 24-Bit, Delta-Sigma ADC

1Features •Programmabledatarate: –Upto400kSPS(widebandfilter) –Upto1.067MSPS(low-latencyfilter) •Selectabledigitalfilter: –Widebandorlow-latency •ACaccuracywithdcprecision: –Dynamicrange:111.5dB(200kSPS) –THD:–120dB –INL:0.9ppmofFS –Offsetdrift:

AIMZH120R010M1T

Marking：A12M1T010；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=202AatTC=25°C •RDS(on)=8.7mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswi

AIMZH120R020M1T

Marking：A12M1T020；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=100AatTC=25°C •RDS(on)=19mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswit

AIMZH120R030M1T

Marking：A12M1T030；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=69AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

AIMZH120R040M1T

Marking：A12M1T040；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=55AatTC=25°C •RDS(on)=40mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc