丝印：A1；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

Features • Low forward voltage • Fast reverse recovery time • Small total capacitance

文件：964.04 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

丝印：A1；Package：SOD-723；SOD-723 Plastic-Encapsulate Diodes

FEATURES Small surface mounting type High pseed High reliability with high surge current handing capability

文件：1.37805 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-sav

文件：860.05 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：A1；Package：SOT-23；SMD Switching Diode

Features - Fast switching speed. - High conductance. - Surface mount package ideally suited for automatic insertion. - For general purpose switching applications. - AEC-Q101 Qualified.

文件：470.81 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：A1；Package：SOT-23；Plastic-Encapsulated Diode

FEATURES ⚫ High switching speed ⚫ For general purpose switching applications ⚫ High conductance ⚫ AEC-Q101 qualified

文件：964.72 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：A1；Package：SOD123F；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive pe

文件：192.58 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A1；Package：SOD123F；High-speed switching diodes

Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages

文件：773.33 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A1；Package：SOD123F；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive pe

文件：190.29 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A1；Package：SOT23；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Small SM

文件：228.33 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A1；Package：SOT-23；Dual Switching Diodes

FEATURES Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Fast switching speed High Conductance Surface mount package ideally Suited for Automatic Insertion

文件：1.5792 Mbytes 页数：3 Pages

RFERFE international

RFE国际公司RFE国际股份有限公司