丝印：A1015；Package：TO-92；PNP Epitaxial Silicon Transistor

文件：233.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：A1015；Package：TO-92；PNP Epitaxial Silicon Transistor

文件：233.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：BA；Package：SOT-23；TRANSISTOR

TRANSISTOR (PNP) FEATURES ● Power dissipation

文件：547.62 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

丝印：BA；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815

文件：1.51724 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BA；Package：SOT-23；Plastic-Encapsulate Transistors

文件：418.87 Kbytes 页数：2 Pages

SHENZHENSLS

三联盛

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power dissipation

文件：876.73 Kbytes 页数：4 Pages

JIANGSU

长电科技

High voltage and high current

FEATURES High voltage and high current Excellent hFE Linearity Low niose ,Complementary to C1815

文件：123.73 Kbytes 页数：2 Pages

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份（香港）有限公司

PNP Epitaxial Silicon Transistor

KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：174.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

文件：48.52 Kbytes 页数：2 Pages

Panasonic

松下

PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

文件：156 Kbytes 页数：2 Pages

TOSHIBA

东芝