TEA19162CTSLASH1

Marking：A19162C；Package：SO8；PFC controller

Generaldescription TheTEA19162CTandTEA19161CTarecombinedcontroller(combo)ICsforresonant topologiesincludingPFC.Theyprovidehighefficiencyatallpowerlevels.Together withtheTEA1995TdualLLCresonantSRcontroller,acost-effectiveresonantpower supplycanbebuilt.Thisp

TF3401

Marking：A11TFw；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TMAG5231A1CQDMRR

Marking：A1C；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features •Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V •1.65-Vto5.5-VoperatingVCCrange •Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

TMAG5231A1CQDMRR

Marking：A1C；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features •Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V •1.65-Vto5.5-VoperatingVCCrange •Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

TMAG5231A1CQDMRR

Marking：A1C；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features •Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V •1.65-Vto5.5-VoperatingVCCrange •Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

TMAG5328A1DQDBVR

Marking：A1D；Package：SOT-23；TMAG5328 Resistor and Voltage Adjustable, Low-Power Hall-Effect Switch

1Features •Supplyrangeof1.65Vto5.5V •Operatingtemperature:–40°Cto125°C •AdjustableBOPfrom2mTto15mT –Using2kΩto15kΩresistors –or160mVto1200mVvoltagesource •OmnipolarHallswitch •Push-pulloutput •Lowpowerconsumption –20Hzdutycycle(A1Dversion):1.4μA

TPS6286A10VBMR

Marking：A10；Package：VQFN-HR；TPS6286Axx and TPS6286Bxx 2.4V to 5.5V Input, 6A, 8A, and 10A, Synchronous Step-Down Converter in 2mm × 3mm QFN Package With FB/I2C Interface

1Features •2.4Vto5.5Vinputvoltagerange •8mΩand8mΩinternalpowerMOSFETs •5.1μAoperatingquiescentcurrent •1.2MHzswitchingfrequency •100%dutycyclemode •0.7%outputvoltageaccuracy •ForcedPWMorpowersavemode •DCS-Controltopology(constanton-time) •FB

TTA1452B

Marking：A1452B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •High-CurrentSwitching Features (1)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.4V(max)(IC=-6A,IB=-0.3A) (2)Highspeedswitching:tstg=1μs(typ.) (3)ComplementarytoTTC3710B

UMA10N

Marking：A10；Package：UMT5；General purpose (dual digital transistors)

UMA10N/FMA10A/IMB17A Features 1)TwoDTA113ZchipsinaUMTorSMTpackage. UMG10N Features 1)TwoDTA113ZchipsinaUMTpackage.

UMW3401C

Marking：A19T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION zLoadSwitchforPortableDevices zDC/DCConverter