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MICROWAVE POWER GaAs FET

DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURES • Hig

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MITSUBISHI

三菱电机

TAPE CARRIER MICROWAVE POWER GaAs FET?

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MITSUBISHI

三菱电机

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE?

FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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MITSUBISHI

三菱电机