STAINLESS STEEL PITOT TUBE ASME Design Meets AMCA and ASHRAE Codes

FEATURES/BENEFITS • Low sensitivity to misalignment up to 15 degrees • No calibration needed due to ASHRAE tip design • Silver soldered connections for leak-proof operation • 5/16˝ models rated to 1500°F (815.5°C) APPLICATIONS • Monitor or control air velocity or air flow when combined wit

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DWYER

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

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MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

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MOTOROLA

摩托罗拉

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

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NEC

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