N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

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N-channel TrenchMOS transistor

VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a

文件：110.93 Kbytes 页数：12 Pages

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飞利浦

N-channel TrenchMOS transistor

VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a

文件：110.93 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：769.6 Kbytes 页数：12 Pages

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