| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3MTMSingleCoatedMedicalPlasticTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Cat5eUTPPatchCable | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW组件有限公司 | ASSMANN | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRALOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
5000 |
公司存货 |
询价 | |||||
RedingtonCounters-Inc. |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Redington Counters- Inc. |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
SST |
00/01+ |
SOP-8 |
71 |
全新原装100真实现货供应 |
询价 | ||
SI |
23+ |
SOP8 |
5000 |
特价库存 |
询价 | ||
SI |
15+ |
SOP8 |
10000 |
全新原装正品现货 |
询价 | ||
2020+ |
SOP |
370 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
NS |
22+ |
SOP-8 |
500 |
福安瓯为您提供真芯库存,真诚服务 |
询价 | ||
SIX |
22+ |
SOP8S |
3629 |
原装优势!房间现货!欢迎来电! |
询价 | ||
SOP-8 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 |
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