Dual N-Channel 20-V (D-S) MOSFET

文件：982.02 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

文件：56.14 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V

文件：206.65 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体