Ultra-fast Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features  Small Compact Surface Mountable Package with J−Bend Leads  Rectangular Package for Autom

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Power Rectifier, Ultra-Fast Recovery, 2 A, 300-400 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

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600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

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Schottky Power Rectifier Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

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Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：262.13 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

文件：204.63 Kbytes 页数：8 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：150.3 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：249.27 Kbytes 页数：8 Pages

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安森美半导体