NPN Silicon Expitaxial Transistor

This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • High Voltage • The SOT-223 Package Can Be

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MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V

Features • Low RDS(on) • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free

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High Voltage Transistor

Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

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Self-Protected Low Side Driver with In-Rush Current Management

The NCV8415 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

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Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

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Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223

HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circui

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Self-Protected Low Side Driver with Temperature and Current Limit

NCV8405A/B is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. Features  Short−Circuit Pro

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Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N−Channel

NCV8406A/B is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Feature

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NPN Small-Signal Darlington Transistor

This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • The SOT-223 Package can be

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