MOSFET – Power, N-Channel, D2PAK 60 V, 60 A

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC−Q101 Qualified and PPAP Capable − NVB60N06 • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • C

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Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

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Switch-mode Power Rectifier D2PAK Power Surface Mount Package

These state−of−the−art devices are designed for use in switching power supplies, inverters, and as free wheeling diodes. Features • Package Designed for Power Surface Mount Applications • Ultrafast 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @

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NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount

The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Integrated High−Voltage

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Switch-mode Power Rectifier 100 V, 40 A

Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • Guard−Ring for Stress Protection • NRVBB Prefix for Automotive and Other Applications Requiring Uniq

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Switch-mode Power Rectifier 100 V, 60 A

Features and Benefits • Low Forward Voltage: 0.72 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 60 A Total (30 A Per Diode Leg) • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen

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Switch-mode Schottky Power Rectifier 250 V, 40 A

Features  250 V Blocking Voltage  Low Forward Voltage Drop, VF = 0.86 V  Soft Recovery Characteristic, TRR

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Switch-mode Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from

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Switch‐mode Power Rectifiers TO−220/D2PAK Surface Mount Power Package

These state-of-the-art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications (D2PAK) • Center-Tap Configuration (D2PAK) • Guardring for Stress Protection • Low Forward Voltage • 175°C Operatin

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Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

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