Isolated High Current IGBT Gate Driver

NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

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Isolated High Current IGBT Gate Driver

NCD57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

文件：519.919 Kbytes 页数：22 Pages

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安森美半导体

Isolated High Current IGBT Gate Driver

NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

文件：520.659 Kbytes 页数：22 Pages

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安森美半导体

Isolated High Current IGBT Gate Driver

NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

文件：519.909 Kbytes 页数：22 Pages

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5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver

The NCP51560 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51560 offers short and matched propagation delays. Two independent and 5 kVrms inter

文件：3.34574 Mbytes 页数：30 Pages

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Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：839.97 Kbytes 页数：24 Pages

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Isolated High Current IGBT Gate Driver

NCV57001F is a variant of NCV57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCV57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features

文件：547.93 Kbytes 页数：19 Pages

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5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver

The NCP51561 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51561 offers short and matched propagation delays. Two independent and 5 kVrms inter

文件：3.55913 Mbytes 页数：32 Pages

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安森美半导体

5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver

The NCV51561 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCV51561 offers short and matched propagation delays. Two independent and 5 kVrms inter

文件：3.55903 Mbytes 页数：32 Pages

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安森美半导体

Isolated Dual Channel IGBT/MOSFET Gate Driver

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up

文件：843.3 Kbytes 页数：24 Pages

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