Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 m

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MOSFET ?밣ower, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 24 A, 150 m

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 m

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MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A

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