Switch-mode Power Rectifier 150 V, 20 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supply − Output Rectification • Power Managemen

文件：304.15 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier 150 V, 10 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mec

文件：186.27 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits  Low Forward Voltage  Low Power Loss/High Efficiency  High Surge Capability  30 A Total (15 A Per Diode Leg)  Guard−Ring for Stress Protection  These Devices are Pb−Free and are RoHS Compliant Applications  Power Supply − Output Rectification  Power Managemen

文件：314.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier 60 V, 20 A

Features and Benefits  Low Power Loss/High Efficiency  High Surge Capacity  20 A Total (10 A Per Diode Leg)  Guard−Ring for Stress Protection  These Devices are Pb−Free and are RoHS Compliant* Applications  Power Supply − Output Rectification  Power Management  Instrumentation Me

文件：315.97 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Power Darlingtons For Isolated Package Applications

Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features  Electrically Similar to the Popular TIP122 and TIP127  100 VCEO(sus)  5.0 A Rated Collector Current

文件：224.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 35 Nanosecond Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • High Temperature Glass Passivated Junction •

文件：164.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier 100 V, 30 A

Features and Benefits  Low Forward Voltage: 0.67 V @ 125C  Low Power Loss/High Efficiency  High Surge Capacity  175C Operating Junction Temperature  30 A Total (15 A Per Diode Leg)  These are Pb−Free Devices Applications  Power Supply − Output Rectification  Power Management 

文件：322.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier 250 V, 40 A

Features  250 V Blocking Voltage  Low Forward Voltage Drop, VF = 0.86 V  Soft Recovery Characteristic, TRR

文件：394.61 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：173.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

文件：181.92 Kbytes 页数：5 Pages

ONSEMI

安森美半导体