Switch-Mode Power Rectifiers

These state−of−the−art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 25 ns, 50 ns and 75 ns Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature G

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Axial-Lead Glass Passivated Standard Recovery Rectifiers

Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: Features • High Current to Small Size • High Surge Current Capability • Low Forward Voltage Drop • Void−Free Economical Plastic Packag

文件：159.64 Kbytes 页数：7 Pages

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Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：243.87 Kbytes 页数：9 Pages

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安森美半导体

Axial Lead Rectifiers

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee

文件：168.5 Kbytes 页数：6 Pages

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安森美半导体

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

文件：166.64 Kbytes 页数：5 Pages

ONSEMI

安森美半导体