98ASB42170B中文资料安森美半导体数据手册PDF规格书

These devices employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

特性 Features

 Extremely Low vF

 Low Power Loss/High Efficiency

 Highly Stable Oxide Passivated Junction

 Low Stored Charge, Majority Carrier Conduction

 Pb−Free Packages are Available*

Mechanical Characteristics:

 Case: Epoxy, Molded

 Weight: 1.1 Gram (Approximately)

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead Temperature for Soldering Purposes:

260C Max. for 10 Seconds

 Polarity: Cathode indicated by Polarity Band