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1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：717.03 Kbytes 页数：12 Pages

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丝印：918010；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：717.03 Kbytes 页数：12 Pages

NEXPERIA

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