丝印：918010；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

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TrenchMOS??logic level FET

文件：296.67 Kbytes 页数：13 Pages

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PHI

N-channel TrenchMOS logic level FET

文件：342.7 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

文件：342.7 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance\n• Q101 compliant\n• Suitable for logic level gate drive sources;

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