丝印：911；Package：SOT-23；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: PBHV8110DA

文件：413.7 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：911；Package：SOT-23；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN co

文件：413.93 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：911；Package：SOT23-5L；200MHz, High-Speed, CMOS, Rail-to-Rail Operational Amplifier

文件：470.52 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

丝印：91102132；WE-OEFA LFS Oval Ferrite Core

General Information: Operating Temperature -40 °C up to +105 °C Storage Conditions (in original packaging)

文件：391.56 Kbytes 页数：4 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：396 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：911D；Package：SOT-89；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：375.89 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：91140H；Package：LFPAK33；N-channel 40 V, 11.0 mΩ logic level MOSFET in LFPAK33

1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits • Fully automotive quali

文件：287.35 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：911310E；Package：LFPAK56；N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive aval

文件：734.99 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：91180E；Package：LFPAK56；N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive av

文件：745.66 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：9111；Package：DFN；Industrial SPoE PD Controller

DESCRIPTION The LTC®9111 is an IEEE 802.3cg compliant Single-Pair Power over Ethernet (SPoE) Powered Device (PD) controller. A wide 2.3V to 60V operating range capability with polarity correction make the LTC9111 particularly well suited for classification-based systems in building and facto

文件：1.10843 Mbytes 页数：20 Pages

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