丝印：850L；Package：WDFN8；Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：195.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：850L；Package：WDFN8；Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件：192.78 Kbytes 页数：7 Pages

ONSEMI

安森美半导体