丝印：850L；Package：WDFN8；Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件：192.78 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件：204.03 Kbytes 页数：7 Pages

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安森美半导体

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：204.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：195.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体