丝印：822；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：1.44845 Mbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：822；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：878.12 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：822B；Package：SMA；1.5W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.5W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.77 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：822B；Package：SMA；1.5 Watt Plastic Surface Mount Zener Voltage Regulators

Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages

文件：225.09 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器

丝印：822H；Package：VQFN(RHB)；DP83822 Robust, Low Power 10/100 Mbps Ethernet Physical Layer Transceiver

1 Features • Ultra-robust 10/100Mbs PHY – IEC 61000-4-2 ESD: +/- 8KV contact discharge – IEC 61000-4-4 EFT: Class A at 4KV – CISPR 22 conducted emissions: Class B – CISPR 22 radiated emissions: Class B – Operating temperature: -40C to 125C • MAC interfaces: RGMII / RMII / MII • IEEE 802.3u

文件：2.98655 Mbytes 页数：133 Pages

TI

德州仪器