丝印：822；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：1.44845 Mbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：822；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：878.12 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：822B；Package：SMA；1.5W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.5W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.77 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：822B；Package：SMA；1.5 Watt Plastic Surface Mount Zener Voltage Regulators

Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages

文件：225.09 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：822B；Package：SMA；1.5 Watt Plastic Surface Mount Zener Voltage Regulators

Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages

文件：225.09 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：8220；Package：TSON；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES − Tx Block − • Circuit Current (DRV + PA) : I = 160 mA TYP. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin = −19 dBm, Pout = +20.5 dBm • Output Power : Pout = +20.5 dBm MIN. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin = −19 dBm • Power Gain : GP = 39.5 dB MIN. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin =

文件：261.87 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：8220；Package：TSON；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES − Tx Block − • Circuit Current (DRV + PA) : I = 160 mA TYP. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin = −19 dBm, Pout = +20.5 dBm • Output Power : Pout = +20.5 dBm MIN. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin = −19 dBm • Power Gain : GP = 39.5 dB MIN. @ VCC = Vds = 3.0 V, f = 1.9 GHz, Pin =

文件：261.87 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：8220；Package：SOT-5X3；DRV8220 18-V H-Bridge Motor Driver with PWM, PH/EN, and Half-Bridge Control Interfaces and Low-Power Sleep Mode

文件：4.38024 Mbytes 页数：47 Pages

TI

德州仪器

丝印：8227；Package：8LdTDFN；Precision Single and Dual Low Noise Operational Amplifiers

文件：2.24504 Mbytes 页数：33 Pages

RENESAS

瑞萨

丝印：8227Z；Package：8LdMSOP；Precision Single and Dual Low Noise Operational Amplifiers

文件：2.24504 Mbytes 页数：33 Pages

RENESAS

瑞萨