丝印：8205A；Package：SOT23-6；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.34742 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：8205A；Package：SOT-23-6；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

文件：1.72304 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：8205A；Package：SOT23-6；Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management

文件：2.45824 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆Vgs+12V

文件：3.0646 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：8205A；Package：TSSOP-8；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：3.60546 Mbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：8205A；Package：SOT23-6；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.34742 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

Dual N-Channel Enhancement Power Mosfet

Product Summary Vos = 20V,ID=6A RDS(ON), 19.5m 2 (Typ) @ VGS =4.5V RDS(ON), 25m 2 (Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.86043 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

文件：3.55627 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体