丝印：7X；WE-TVS TVS Diode – Standard Series

General Information: Operating Temperature -55 up to +85 °C Storage Conditions (in original packaging)

文件：686.47 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：7X；Package：SOD-123；Transient Voltage Suppressing Device For ESD/Surge/Transient Protection

Features
ESD/Surge protection for one line with uni-directional
Provide transient protection for one line to IEC 61000-4-2 (ESD) ±30kV (air/contact) IEC 61000-4-4 (EFT) ±80A (5/50ns) IEC 61000-4-5 (Lightning) 13A (8/20μs)
Suitable for, 40V and below, operating voltage applications

文件：201.72 Kbytes 页数：6 Pages

AMAZING

晶焱科技

丝印：7X；Package：DFN1610P2E；Transient Voltage Suppressing Device For ESD and Surge Protection

Features
ESD/Surge Protection for 1 Line with Unidirectional.
Provide ESD protection for each line to IEC 61000-4-2 (ESD) ±30kV (air / contact) IEC 61000-4-4 (EFT) 80A (5/50ns) IEC 61000-4-5 (Lightning) 32A (8/20μs)
For operating voltage of 14V and below
1.6mm x 1.0mm DFN package s

文件：156.32 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：7X；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7X；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7X；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：246.74 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7X；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YT-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • 500 mA output current capability • Reduces

文件：221.05 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7X；Package：X2SON；SN74LVC1G3157 Single-Pole Double-Throw Analog Switch

1 Features • ESD protection exceeds JESD 22 – 2000V Human Body Model (A114-A) – 1000V Charged-Device Model (C101) • 1.65V to 5.5V VCC operation • Qualified for 125°C operation • Specified break-before-make switching • Rail-to-rail signal handling • Operating frequency typically 340MHz at r

文件：3.26035 Mbytes 页数：52 Pages

TI

德州仪器

丝印：7X；Package：X2SON(DTB)；SN74LVC1G3157 Single-Pole Double-Throw Analog Switch

1 Features • ESD protection exceeds JESD 22 – 2000V Human Body Model (A114-A) – 1000V Charged-Device Model (C101) • 1.65V to 5.5V VCC operation • Qualified for 125°C operation • Specified break-before-make switching • Rail-to-rail signal handling • Operating frequency typically 340MHz at r

文件：3.28812 Mbytes 页数：54 Pages

TI

德州仪器

丝印：7X；Package：X2SON(DTB)；SN74LVC1G3157 Single-Pole Double-Throw Analog Switch

1 Features • ESD protection exceeds JESD 22 – 2000V Human Body Model (A114-A) – 1000V Charged-Device Model (C101) • 1.65V to 5.5V VCC operation • Qualified for 125°C operation • Specified break-before-make switching • Rail-to-rail signal handling • Operating frequency typically 340MHz at r

文件：3.28812 Mbytes 页数：54 Pages

TI

德州仪器