824045817

Marking：7X；WE-TVS TVS Diode – Standard Series

GeneralInformation: OperatingTemperature-55upto+85°C StorageConditions(inoriginal packaging)

AZ4040-01G.R7G

Marking：7X；Package：SOD-123；Transient Voltage Suppressing Device For ESD/Surge/Transient Protection

Features
ESD/Surgeprotectionforonelinewith uni-directional
Providetransientprotectionforonelineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)±80A(5/50ns) IEC61000-4-5(Lightning)13A(8/20μs)
Suitablefor,40Vandbelow,operatingvoltage applications

AZ4514-01F

Marking：7X；Package：DFN1610P2E；Transient Voltage Suppressing Device For ESD and Surge Protection

Features
ESD/SurgeProtectionfor1Linewith Unidirectional.
ProvideESDprotectionforeachlineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)32A(8/20μs)
Foroperatingvoltageof14Vandbelow
1.6mmx1.0mmDFNpackages

BZX8850S-C39

Marking：7X；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

BZX8850S-C39-Q

Marking：7X；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

PDTD123YT

Marking：7X；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTD123YT-Q

Marking：7X；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTB123YT-Q 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •500mAoutputcurrentcapability •Reduces

SN74LVC1G3157DTBR

Marking：7X；Package：X2SON；SN74LVC1G3157 Single-Pole Double-Throw Analog Switch

1Features •ESDprotectionexceedsJESD22 –2000VHumanBodyModel(A114-A) –1000VCharged-DeviceModel(C101) •1.65Vto5.5VVCCoperation •Qualifiedfor125°Coperation •Specifiedbreak-before-makeswitching •Rail-to-railsignalhandling •Operatingfrequencytypically340MHzatr

MM3Z6V8B

Marking：7X；Package：SC-76；Silicon Planar zener diodes

NUP1128WTT1G

Marking：7X；Package：SC-70；IVN Bus Protector, Single Line LIN & Dual Line CAN