7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

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UTC

友顺

N-Channel MOSFET uses advanced trench technology

文件：1.59175 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：7N65AT；Package：TO-220AB；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

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佑风微

丝印：7N65AF；Package：TO-220F(0.5mm)；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：7N65AS；Package：TO-263；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：7N65AS；Package：TO-263；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：7N65AMJ；Package：TO-251；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：7N65AD；Package：TO-252；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微