HOLE PLUGS & BUSHINGS

文件：313.08 Kbytes 页数：1 Pages

KEYSTONE

Keystone Electronics Corp.

HOLE PLUGS and BUSHINGS

文件：320.57 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：7611；Package：SIP-3L；Complementary Output Hall Effect Fan Driver

GENERAL DESCRIPTION MA7611 is integrated Hall sensors with output drivers, mainly designed for electronic commutation of brush-less DC Fan. This IC is using HV BCD process internally includes the regulator, protecting diode, Hall plate, amplifier, comparator, and a pair of complementary open-D

文件：127.71 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器