丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：1.30933 Mbytes 页数：27 Pages

TI

德州仪器

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器